A method for reducing surface roughness during the thermal desorption of silicon

An in situ method for inhibiting surface roughening during the thermal removal of the silicon native oxide layer is explored and developed. The method entails depositing a thin sacrificial silicon film at low temperature directly exterior to the native oxide, following which the sample is heated such that the native oxide preferentially reacts with the sacrificial film reducing wafer etching. The results indicate a significant improvement in surface smoothness, from an RMS roughness of 2.70 to 0.84 nm, while leaving an exposed surface which has been demonstrated to be suitable for epitaxial growth.