A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ • cm2 on-resistance

Ke Zeng; Abhishek Vaidya; Uttam Singisetti

doi:10.7567/1882-0786/ab2e86

A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ • cm² on-resistance

Ke Zeng
, Abhishek Vaidya
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

A composite field-plated Ga₂O₃ MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm^-1 and on-resistance of 520 mΩ • cm² shows big improvement upon the previous experiment on similar field plated devices. The breakdown voltage is measured to be 1975 V on an L _gd = 25 μm device. At elevated temperatures, the breakdown voltage decreases to <1 kV at 130 °C, while the on-resistance and saturation current are almost unchanged. The breakdown may be limited by the dielectric liquid strength. The on-resistance is limited by high interface state density that is attributed to the thermal process during the field oxide deposition.

Original language	English
Article number	081003
Journal	Applied Physics Express
Volume	12
Issue number	8
DOIs	https://doi.org/10.7567/1882-0786/ab2e86
State	Published - Aug 1 2019

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title = "A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ • cm2 on-resistance",

abstract = "A composite field-plated Ga2O3 MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm-1 and on-resistance of 520 mΩ • cm2 shows big improvement upon the previous experiment on similar field plated devices. The breakdown voltage is measured to be 1975 V on an L gd = 25 μm device. At elevated temperatures, the breakdown voltage decreases to <1 kV at 130 °C, while the on-resistance and saturation current are almost unchanged. The breakdown may be limited by the dielectric liquid strength. The on-resistance is limited by high interface state density that is attributed to the thermal process during the field oxide deposition.",

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AU - Singisetti, Uttam

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Y1 - 2019/8/1

N2 - A composite field-plated Ga2O3 MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm-1 and on-resistance of 520 mΩ • cm2 shows big improvement upon the previous experiment on similar field plated devices. The breakdown voltage is measured to be 1975 V on an L gd = 25 μm device. At elevated temperatures, the breakdown voltage decreases to <1 kV at 130 °C, while the on-resistance and saturation current are almost unchanged. The breakdown may be limited by the dielectric liquid strength. The on-resistance is limited by high interface state density that is attributed to the thermal process during the field oxide deposition.

AB - A composite field-plated Ga2O3 MOSFET with highly doped ohmic-capping layer is fabricated. An output current of 20 mA mm-1 and on-resistance of 520 mΩ • cm2 shows big improvement upon the previous experiment on similar field plated devices. The breakdown voltage is measured to be 1975 V on an L gd = 25 μm device. At elevated temperatures, the breakdown voltage decreases to <1 kV at 130 °C, while the on-resistance and saturation current are almost unchanged. The breakdown may be limited by the dielectric liquid strength. The on-resistance is limited by high interface state density that is attributed to the thermal process during the field oxide deposition.

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A field-plated Ga₂O₃ MOSFET with near 2-kV breakdown voltage and 520 mΩ • cm² on-resistance

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