A drastic change of the effective g-value in nanostructure system: Zeeman attenuator

N. Aoki; L. H. Lin; D. Oonishi; M. Kida; Y. Iwase; K. Ishibashi; Y. Aoyagi; J. P. Bird; D. K. Ferry; J. Oswald; Y. Ochiai

doi:10.1016/S0921-4526(01)01370-9

A drastic change of the effective g-value in nanostructure system: Zeeman attenuator

N. Aoki
, L. H. Lin
, D. Oonishi
, M. Kida
, Y. Iwase
, K. Ishibashi
, Y. Aoyagi
, J. P. Bird
, D. K. Ferry
, J. Oswald
, Y. Ochiai

Department of Electrical Engineering

Chiba University
RIKEN
Arizona State University
University of Leoben

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01370-9
State	Published - Mar 2002

Keywords

g-Value
Quantum Hall effect
Quantum point contact
Quantum-dot array
Zeeman splitting

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10.1016/S0921-4526(01)01370-9

Cite this

@article{cfadd494d60f43cf9b3f9f17af2d0879,

title = "A drastic change of the effective g-value in nanostructure system: Zeeman attenuator",

abstract = "We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.",

keywords = "g-Value, Quantum Hall effect, Quantum point contact, Quantum-dot array, Zeeman splitting",

author = "N. Aoki and Lin, \{L. H.\} and D. Oonishi and M. Kida and Y. Iwase and K. Ishibashi and Y. Aoyagi and Bird, \{J. P.\} and Ferry, \{D. K.\} and J. Oswald and Y. Ochiai",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01370-9",

language = "English",

volume = "314",

pages = "235--238",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - A drastic change of the effective g-value in nanostructure system

T2 - Zeeman attenuator

AU - Aoki, N.

AU - Lin, L. H.

AU - Oonishi, D.

AU - Kida, M.

AU - Iwase, Y.

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Bird, J. P.

AU - Ferry, D. K.

AU - Oswald, J.

AU - Ochiai, Y.

PY - 2002/3

Y1 - 2002/3

N2 - We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.

AB - We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.

KW - g-Value

KW - Quantum Hall effect

KW - Quantum point contact

KW - Quantum-dot array

KW - Zeeman splitting

UR - https://www.scopus.com/pages/publications/0036504449

U2 - 10.1016/S0921-4526(01)01370-9

DO - 10.1016/S0921-4526(01)01370-9

M3 - Article

AN - SCOPUS:0036504449

SN - 0921-4526

VL - 314

SP - 235

EP - 238

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

A drastic change of the effective g-value in nanostructure system: Zeeman attenuator

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Keywords

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