A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β

Radha Krishna Mothukuru; Manish Kumar; Bibhu Datta Sahoo

doi:10.1109/MWSCAS.2019.8885233

A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β

Radha Krishna Mothukuru
, Manish Kumar
, Bibhu Datta Sahoo

Department of Electrical Engineering

Indian Institute of Technology Kharagpur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper proposes a technique for the curvature compensation in Bandgap references to obtain a better Temperature Coefficient (TC). The proposed method is based on the fact that the Bipolar junction transistors used in Bandgap references have finite Beta which is temperature dependent. As β of NPN transistors in CMOS process is very low, Darlington configuration is used to achieve larger β to achieve the desired curvature compensation. Designed and simulated in TSMC 180-nm CMOS process the proposed bandgap circuit achieves a temperature coefficient of 9.9 ppm/°C across a temperature range of -40°C to 125°C and a line regulation from 1.6 V to 4.0 V.

Original language	English
Title of host publication	2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	509-512
Number of pages	4
ISBN (Electronic)	9781728127880
DOIs	https://doi.org/10.1109/MWSCAS.2019.8885233
State	Published - Aug 2019
Event	62nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2019 - Dallas, United States Duration: Aug 4 2019 → Aug 7 2019

Publication series

Name	Midwest Symposium on Circuits and Systems
Volume	2019-August
ISSN (Print)	1548-3746

Conference

Conference	62nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2019
Country/Territory	United States
City	Dallas
Period	08/4/19 → 08/7/19

Keywords

Bandgap Reference (BGR)
Complementary-to-absolute-Temperature (CTAT)
Darlington Pair
Negative temperature Coefficient (NTC)
Positive Temperature Coefficient (PTC)
Proportional-to-absolute-temperature (PTAT)
Temperature Coefficient (TC)

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10.1109/MWSCAS.2019.8885233

Cite this

Mothukuru, R. K., Kumar, M., & Sahoo, B. D. (2019). A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β. In 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019 (pp. 509-512). Article 8885233 (Midwest Symposium on Circuits and Systems; Vol. 2019-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSCAS.2019.8885233

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title = "A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β",

abstract = "This paper proposes a technique for the curvature compensation in Bandgap references to obtain a better Temperature Coefficient (TC). The proposed method is based on the fact that the Bipolar junction transistors used in Bandgap references have finite Beta which is temperature dependent. As β of NPN transistors in CMOS process is very low, Darlington configuration is used to achieve larger β to achieve the desired curvature compensation. Designed and simulated in TSMC 180-nm CMOS process the proposed bandgap circuit achieves a temperature coefficient of 9.9 ppm/°C across a temperature range of -40°C to 125°C and a line regulation from 1.6 V to 4.0 V.",

keywords = "Bandgap Reference (BGR), Complementary-to-absolute-Temperature (CTAT), Darlington Pair, Negative temperature Coefficient (NTC), Positive Temperature Coefficient (PTC), Proportional-to-absolute-temperature (PTAT), Temperature Coefficient (TC)",

author = "Mothukuru, \{Radha Krishna\} and Manish Kumar and Sahoo, \{Bibhu Datta\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 62nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2019 ; Conference date: 04-08-2019 Through 07-08-2019",

year = "2019",

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doi = "10.1109/MWSCAS.2019.8885233",

language = "English",

series = "Midwest Symposium on Circuits and Systems",

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Mothukuru, RK, Kumar, M & Sahoo, BD 2019, A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β. in 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019., 8885233, Midwest Symposium on Circuits and Systems, vol. 2019-August, Institute of Electrical and Electronics Engineers Inc., pp. 509-512, 62nd IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2019, Dallas, United States, 08/4/19. https://doi.org/10.1109/MWSCAS.2019.8885233

A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β. / Mothukuru, Radha Krishna; Kumar, Manish; Sahoo, Bibhu Datta.
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 509-512 8885233 (Midwest Symposium on Circuits and Systems; Vol. 2019-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kumar, Manish

AU - Sahoo, Bibhu Datta

PY - 2019/8

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N2 - This paper proposes a technique for the curvature compensation in Bandgap references to obtain a better Temperature Coefficient (TC). The proposed method is based on the fact that the Bipolar junction transistors used in Bandgap references have finite Beta which is temperature dependent. As β of NPN transistors in CMOS process is very low, Darlington configuration is used to achieve larger β to achieve the desired curvature compensation. Designed and simulated in TSMC 180-nm CMOS process the proposed bandgap circuit achieves a temperature coefficient of 9.9 ppm/°C across a temperature range of -40°C to 125°C and a line regulation from 1.6 V to 4.0 V.

AB - This paper proposes a technique for the curvature compensation in Bandgap references to obtain a better Temperature Coefficient (TC). The proposed method is based on the fact that the Bipolar junction transistors used in Bandgap references have finite Beta which is temperature dependent. As β of NPN transistors in CMOS process is very low, Darlington configuration is used to achieve larger β to achieve the desired curvature compensation. Designed and simulated in TSMC 180-nm CMOS process the proposed bandgap circuit achieves a temperature coefficient of 9.9 ppm/°C across a temperature range of -40°C to 125°C and a line regulation from 1.6 V to 4.0 V.

KW - Bandgap Reference (BGR)

KW - Complementary-to-absolute-Temperature (CTAT)

KW - Darlington Pair

KW - Negative temperature Coefficient (NTC)

KW - Positive Temperature Coefficient (PTC)

KW - Proportional-to-absolute-temperature (PTAT)

KW - Temperature Coefficient (TC)

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M3 - Conference contribution

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SP - 509

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BT - 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems, MWSCAS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 4 August 2019 through 7 August 2019

ER -

A Curvature Compensated Bandgap Circuit Exploiting Temperature Dependence of β

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