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A chemical solution approach to epitaxial metal nitride thin films

  • Hongmei Luo
  • , Yuan Lin
  • , Haiyan Wang
  • , Joon Hwan Lee
  • , Natalya A. Suvorova
  • , Alexander H. Mueller
  • , Anthony K. Burrell
  • , T. Mark McCleskey
  • , Eve Bauer
  • , Igor O. Usov
  • , Marilyn E. Hawley
  • , Terry G. Holesinger
  • , Quanxi Jia
  • Los Alamos National Laboratory
  • University of Electronic Science and Technology of China
  • Texas A&M University
  • Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The growth of epitaxial cubic TiN metastable cubic AlN, and solid solution Ti1-xAlxN films with smooth surface morphologies from polymer-assisted deposition (PAD). The precursors for the growth of TiN, AlN, and Ti1-xAlxN films were prepared using aqueous solutions of Ti and Al bound to polymers PEI and EDTA. Ultrafiltration was carried out by repeated Amicon filtration, which retains the high molecular weight polymer with bound metal atoms, while allows any low molecular weight. The titanium solution tetrachloride was added to a solution containing 1g PEI, 1g EDTA, and 30 mL water. XRD was used to characterize the crystallographic orientation of the films. The surface morphology and surface toughness of the films was analyzed by TEM. It was observed that the room temperature electrical resistivity of the Ti1-xAlxN films increases exponentially with increasing Al contents, while the optical transmittance decreases with increasing Ti content.

Original languageEnglish
Pages (from-to)193-197
Number of pages5
JournalAdvanced Materials
Volume21
Issue number2
DOIs
StatePublished - Jan 12 2009

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