A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon; Jung Hoon Seo; Sang Il Shin; Kyung Hwan Kim; Dong Hoon Choi; In Byeong Kang; Hochul Kang; Byeong Kwon Ju

doi:10.1109/TED.2007.913007

A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

Jae Hong Kwon
, Jung Hoon Seo
, Sang Il Shin
, Kyung Hwan Kim
, Dong Hoon Choi
, In Byeong Kang
, Hochul Kang
, Byeong Kwon Ju

Department of Materials Design and Innovation

Korea University
LG Corporation

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10^-3 cm²/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

Original language	English
Pages (from-to)	500-505
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	2
DOIs	https://doi.org/10.1109/TED.2007.913007
State	Published - Feb 2008

Keywords

6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene)
Organic electronics
Organic thin-film transistor (OTFT)
Spin-on glass

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10.1109/TED.2007.913007

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title = "A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric",

abstract = "We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.",

keywords = "6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene), Organic electronics, Organic thin-film transistor (OTFT), Spin-on glass",

author = "Kwon, \{Jae Hong\} and Seo, \{Jung Hoon\} and Shin, \{Sang Il\} and Kim, \{Kyung Hwan\} and Choi, \{Dong Hoon\} and Kang, \{In Byeong\} and Hochul Kang and Ju, \{Byeong Kwon\}",

year = "2008",

month = feb,

doi = "10.1109/TED.2007.913007",

language = "English",

volume = "55",

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T1 - A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

AU - Kwon, Jae Hong

AU - Seo, Jung Hoon

AU - Shin, Sang Il

AU - Kim, Kyung Hwan

AU - Choi, Dong Hoon

AU - Kang, In Byeong

AU - Kang, Hochul

AU - Ju, Byeong Kwon

PY - 2008/2

Y1 - 2008/2

N2 - We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

AB - We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current on/off ratio, and subthreshold swing, which were 6.48 × 10-3 cm2/V · s,-13 V, ∼100, and 1.83 V/dec, respectively.

KW - 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene)

KW - Organic electronics

KW - Organic thin-film transistor (OTFT)

KW - Spin-on glass

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DO - 10.1109/TED.2007.913007

M3 - Article

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SN - 0018-9383

VL - 55

SP - 500

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric

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Keywords

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