1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

Ke Zeng; Abhishek Vaidya; Uttam Singisetti

doi:10.1109/LED.2018.2859049

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga₂O₃ MOSFETs

Ke Zeng
, Abhishek Vaidya
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

238 Scopus citations

Abstract

A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO₂ layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga₂O₃ MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a L_gd= 20 μm device. This is the first report of lateral Ga₂O₃ MOSFET with more than 1.8 kV breakdown voltage. For a device with L_gd= 1.8 μm, the average electric field strength is calculated to be 2.2 ± 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.

Original language	English
Article number	8418393
Pages (from-to)	1385-1388
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2859049
State	Published - Sep 2018

Keywords

air breakdown
Field plate
Fluorinert
gallium oxide
power MOSFET
SOG doping
spin-on-glass

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10.1109/LED.2018.2859049

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title = "1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs",

abstract = "A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO2 layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga2O3 MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a Lgd= 20 μm device. This is the first report of lateral Ga2O3 MOSFET with more than 1.8 kV breakdown voltage. For a device with Lgd= 1.8 μm, the average electric field strength is calculated to be 2.2 ± 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.",

keywords = "air breakdown, Field plate, Fluorinert, gallium oxide, power MOSFET, SOG doping, spin-on-glass",

author = "Ke Zeng and Abhishek Vaidya and Uttam Singisetti",

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doi = "10.1109/LED.2018.2859049",

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AU - Zeng, Ke

AU - Vaidya, Abhishek

AU - Singisetti, Uttam

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Y1 - 2018/9

N2 - A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO2 layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga2O3 MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a Lgd= 20 μm device. This is the first report of lateral Ga2O3 MOSFET with more than 1.8 kV breakdown voltage. For a device with Lgd= 1.8 μm, the average electric field strength is calculated to be 2.2 ± 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.

AB - A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO2 layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga2O3 MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a Lgd= 20 μm device. This is the first report of lateral Ga2O3 MOSFET with more than 1.8 kV breakdown voltage. For a device with Lgd= 1.8 μm, the average electric field strength is calculated to be 2.2 ± 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.

KW - air breakdown

KW - Field plate

KW - Fluorinert

KW - gallium oxide

KW - power MOSFET

KW - SOG doping

KW - spin-on-glass

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DO - 10.1109/LED.2018.2859049

M3 - Article

AN - SCOPUS:85050378252

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EP - 1388

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 8418393

ER -

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga₂O₃ MOSFETs

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Keywords

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