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15-GHz flexible microwave thin-film transistors on plastic

  • Jung Hun Seo
  • , Han Zhou
  • , Deborah M. Paskiewicz
  • , Max G. Lagally
  • , Weidong Zhou
  • , Zhenqiang Ma
  • Department of Electrical and Computer Engineering
  • University of Wisconsin-Madison
  • University of Texas at Arlington

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate microwave flexible thin-film transistors (TFTs) using transferrable single crystalline Si nanomembranes (NMs). By combining self-sustained strain techniques and strain compatible doping techniques, we realize a new speed record, fmax of 15 GHz, for flexible microwave TFTs based on Si. The TFTs exhibit superior mechanical flexibility. The demonstrations showed the great potential to further develop flexible microwave components and systems.

Original languageEnglish
Title of host publication2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
DOIs
StatePublished - 2013
Event2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013 - Seattle, WA, United States
Duration: Jun 2 2013Jun 7 2013

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013
Country/TerritoryUnited States
CitySeattle, WA
Period06/2/1306/7/13

Keywords

  • Doping
  • Microwave flexible electronics
  • Si nanomembrane
  • Strain
  • Thin-film transistors

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