1.3 μm lasers with AllnAs-capped self-assembled quantum dots

I. R. Sellers; H. Y. Liu; M. Hopkinson; D. J. Mowbray; M. S. Skolnick

doi:10.1063/1.1632533

1.3 μm lasers with AllnAs-capped self-assembled quantum dots

I. R. Sellers
, H. Y. Liu
, M. Hopkinson
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The 1.3 μm room temperature lasing for a self-assembled quantum dots (QD) was discussed. Solid-state molecular beam epitaxy was used to grow a three-QD layer InAs dot-in-a-well device. It was found that the presence of Al-containing layers in direct contact with the QDs does not degrade the optical properties of QDs. The results also show that the presence of AllInAs layers improve the dot uniformity and also increase the emission length and separation between the confined dot states.

Original language	English
Pages (from-to)	4710-4712
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1632533
State	Published - Dec 8 2003

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abstract = "The 1.3 μm room temperature lasing for a self-assembled quantum dots (QD) was discussed. Solid-state molecular beam epitaxy was used to grow a three-QD layer InAs dot-in-a-well device. It was found that the presence of Al-containing layers in direct contact with the QDs does not degrade the optical properties of QDs. The results also show that the presence of AllInAs layers improve the dot uniformity and also increase the emission length and separation between the confined dot states.",

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AU - Liu, H. Y.

AU - Hopkinson, M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The 1.3 μm room temperature lasing for a self-assembled quantum dots (QD) was discussed. Solid-state molecular beam epitaxy was used to grow a three-QD layer InAs dot-in-a-well device. It was found that the presence of Al-containing layers in direct contact with the QDs does not degrade the optical properties of QDs. The results also show that the presence of AllInAs layers improve the dot uniformity and also increase the emission length and separation between the confined dot states.

AB - The 1.3 μm room temperature lasing for a self-assembled quantum dots (QD) was discussed. Solid-state molecular beam epitaxy was used to grow a three-QD layer InAs dot-in-a-well device. It was found that the presence of Al-containing layers in direct contact with the QDs does not degrade the optical properties of QDs. The results also show that the presence of AllInAs layers improve the dot uniformity and also increase the emission length and separation between the confined dot states.

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U2 - 10.1063/1.1632533

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JF - Applied Physics Letters

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ER -

1.3 μm lasers with AllnAs-capped self-assembled quantum dots

Abstract

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