1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

I. R. Sellers; H. Y. Liu; K. M. Groom; D. T. Childs; D. Robbins; T. J. Badcock; M. Hopkinson; D. J. Mowbray; M. S. Skolnick

doi:10.1049/el:20046692

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

I. R. Sellers
, H. Y. Liu
, K. M. Groom
, D. T. Childs
, D. Robbins
, T. J. Badcock
, M. Hopkinson
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield
Bookham Technology plc

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm² are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

Original language	English
Pages (from-to)	1412-1413
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	22
DOIs	https://doi.org/10.1049/el:20046692
State	Published - Oct 28 2004

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title = "1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density",

abstract = "A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.",

author = "Sellers, \{I. R.\} and Liu, \{H. Y.\} and Groom, \{K. M.\} and Childs, \{D. T.\} and D. Robbins and Badcock, \{T. J.\} and M. Hopkinson and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2004",

month = oct,

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doi = "10.1049/el:20046692",

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journal = "Electronics Letters",

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TY - JOUR

T1 - 1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

AU - Sellers, I. R.

AU - Liu, H. Y.

AU - Groom, K. M.

AU - Childs, D. T.

AU - Robbins, D.

AU - Badcock, T. J.

AU - Hopkinson, M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2004/10/28

Y1 - 2004/10/28

N2 - A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

AB - A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the performance of 1.3 μm multilayer InAs/GaAs quantum-dot lasers. Extremely low room-temperature continuous-wave threshold current densities of 32.5 and 17 A/cm2 are achieved for a three-layer device with as-cleaved facets and high-reflectivity coated facets, respectively.

UR - https://www.scopus.com/pages/publications/9144220371

U2 - 10.1049/el:20046692

DO - 10.1049/el:20046692

M3 - Article

AN - SCOPUS:9144220371

SN - 0013-5194

VL - 40

SP - 1412

EP - 1413

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

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