1 MeV electron radiation effects in SnO2 - SiO2 - silicon solar cells

Matthew L. Thayer; Wayne A. Anderson

doi:10.1109/TNS.1983.4333102

1 MeV electron radiation effects in SnO2 - SiO2 - silicon solar cells

Matthew L. Thayer
, Wayne A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 x 1015e-/cm2. These stable terrestrial cells had a critical fluence of 1 x 1013e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 Q-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 x 1016 e/cm2. SIS cells on p-type Si should show improved response.

Original language	English
Pages (from-to)	4169-4172
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1983.4333102
State	Published - Dec 1983

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10.1109/TNS.1983.4333102

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title = "1 MeV electron radiation effects in SnO2 - SiO2 - silicon solar cells",

abstract = "High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66\% decrease in AMO efficiency compared to a typical 23\% decrease in n/p junction cells at a fluence of 1 x 1015e-/cm2. These stable terrestrial cells had a critical fluence of 1 x 1013e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 Q-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75\% decrease in short circuit current density at 3.1 x 1016 e/cm2. SIS cells on p-type Si should show improved response.",

author = "Thayer, \{Matthew L.\} and Anderson, \{Wayne A.\}",

year = "1983",

month = dec,

doi = "10.1109/TNS.1983.4333102",

language = "English",

volume = "30",

pages = "4169--4172",

journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - 1 MeV electron radiation effects in SnO2 - SiO2 - silicon solar cells

AU - Thayer, Matthew L.

AU - Anderson, Wayne A.

PY - 1983/12

Y1 - 1983/12

N2 - High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 x 1015e-/cm2. These stable terrestrial cells had a critical fluence of 1 x 1013e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 Q-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 x 1016 e/cm2. SIS cells on p-type Si should show improved response.

AB - High efficiency semiconductor-insulator-semiconductor (SIS) solar cells irradiated at 1 MeV showed a 66% decrease in AMO efficiency compared to a typical 23% decrease in n/p junction cells at a fluence of 1 x 1015e-/cm2. These stable terrestrial cells had a critical fluence of 1 x 1013e-/cm2. Spectral response and diffusion length measurements show that this pronounced degradation is related to increased minority carrier recombination in the 0.5 Q-cm n-type Si. Thermionic emission theory indicates a decrease in barrier height with increased fluence. This contributed to the 75% decrease in short circuit current density at 3.1 x 1016 e/cm2. SIS cells on p-type Si should show improved response.

UR - https://www.scopus.com/pages/publications/0020936766

U2 - 10.1109/TNS.1983.4333102

DO - 10.1109/TNS.1983.4333102

M3 - Article

AN - SCOPUS:0020936766

SN - 0018-9499

VL - 30

SP - 4169

EP - 4172

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

1 MeV electron radiation effects in SnO2 - SiO2 - silicon solar cells

Abstract

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