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InN and In-rich InGaN surface passivation by novel Atomic Layer Deposition (ALD) technology

Project: Research

Project Details

Description

INN AND IN-RICH INGAN SURFACE PASSIVATION BY NOVEL ATOMIC LAYER DEPOSITION (ALD) TECHNOLOGY
StatusFinished
Effective start/end date01/1/1308/31/16

Funding

  • US Navy Office of Naval Research: $274,929.00

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