Grants & Projects per year
Personal profile
Fingerprint
Dive into the research topics where Uttam Singisetti is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
-
Northeast AFRL Regional Research Convergence Hub (NE Hub)
Singisetti, U. (PI)
US Air Force Research Laboratory
06/1/26 → 11/30/26
Project: Research
-
Optically Cascoded Ultrahigh Voltage Gallium Oxide Devices for Modular Multi-converter
Singisetti, U. (PI) & Yao, X. (CoI)
05/15/24 → 05/14/27
Project: Research
-
ASCENT: Enabling efficient high power grid applications by high voltage rating ultrawidebandgap transistors
Singisetti, U. (PI), Seo, J. H. (CoI) & Yao, X. (CoI)
10/1/22 → 09/30/27
Project: Research
-
Engineering the future with ultrawide-bandgap semiconductors
Wong, M. H., Ahmadi, E., Bierwagen, O. & Singisetti, U., May 1 2026, In: APL Materials. 14, 5, 050401.Research output: Contribution to journal › Editorial
Open Access -
Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures
Hosseinigheidari, M., Datta, A., Niroula, J., Luo, S., Zhao, Y., Palacios, T. & Singisetti, U., Feb 16 2026, In: Applied Physics Letters. 128, 7, 072103.Research output: Contribution to journal › Article › peer-review
-
Effective phonon dispersion and low-field transport in β-(AlxGa1−x)2O3 alloy semiconductor
Sharma, A., Datta, A. & Singisetti, U., May 21 2025, In: Journal of Applied Physics. 137, 19, 195701.Research output: Contribution to journal › Article › peer-review
Open Access -
E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers
Saha, S., Amir, W., Liu, J., Meng, L., Yu, D., Zhao, H. & Singisetti, U., 2025, In: IEEE Electron Device Letters. 46, 5, p. 725-728 4 p.Research output: Contribution to journal › Article › peer-review
27 Scopus citations -
Enhanced breakdown voltage in b-Ga2O3 Schottky diodes via fast neutron irradiation and electro-thermal annealing
Khan, S. A., Saha, S., Ibreljic, A., Margiotta, S., Liu, J., Amir, W., Chakraborty, S., Singisetti, U. & Bhuiyan, A. F. M. A. U., Dec 22 2025, In: Applied Physics Letters. 127, 25, 252103.Research output: Contribution to journal › Article › peer-review
3 Scopus citations